inchange semiconductor isc product specification isc silicon npn power transistors BUX46/a description high switching speed collector-emitter sustaining voltage- : v ceo(sus) = 400v (min)-BUX46 450v (min)-BUX46a applications designed for use in converters, inverters, switching regulators, motor control systems etc. absolute maximum ratings(t a =25 ) symbol parameter max unit BUX46 850 v ces collector- emitter voltage(v be = 0) BUX46a 1000 v BUX46 400 v ceo collector-emitter voltage BUX46a 450 v v ebo emitter-base voltage 5 v i c collector current-continuous 3.5 a i cm collector current-peak 5 a i b b base current 1.5 a i bm base current-peak 3 a p c collector power dissipation @t c =25 85 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.75 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors BUX46/a electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUX46 400 v ceo(sus) collector-emitter sustaining voltage BUX46a i c = 0.2a ; i b = 0; l= 25mh 450 v v (br)ebo emitter-base breakdown voltage i e = 0.5a ; i c = 0 30 v v ce(sat)-1 collector-emitter saturation voltage i c = 3.5a; i b = 0.7a 5 v v ce(sat)-2 collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v be(sat) base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.3 v i cer collector cutoff current v ce =v cesmax ;r be 10 v ce =v cesmax ;r be 10;t j =124 0.3 2 ma i cex collector cutoff current v ce =v cesmax ;v be =-2.5v v ce =v cesmax ;v be =-2.5v;t j =124 0.1 1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1 ma h fe dc current gain i c = 1a ; v ce = 5v 15 50 switching times , resistive load t on turn-on time 0.5 1.0 s t stg storage time 1.5 3.0 s t f fall time i c = 2.5a ;i b1 = -i b2 = 0.5a 0.5 0.8 s isc website www.iscsemi.cn
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